Wire bond free wafer level LED

摘要

A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

主权项

1. A semiconductor device comprising:
an n-type epitaxial semiconductor layer comprising a first surface and a second surface opposite the first surface; a p-type epitaxial semiconductor layer comprising a third surface and a fourth surface opposite the third surface; an active region between the second surface and the fourth surface; a wavelength conversion layer adjacent to at least a portion of the first surface of said n-type semiconductor layer, wherein the first surface is opposite the third surface of the p-type semiconductor layer; a p-electrode comprising a lead that is accessible on the third surface, the third surface being opposite of a primary emission surface of said semiconductor device, said p-electrode electrically connected to said p-type layer; an n-electrode comprising a lead that is accessible on the second surface, the second surface being opposite of said primary emission surface, said n-electrode electrically connected to said n-type layer; and at least one spacer element, coupled to the n-electrode and the p-electrode, such that the at least one spacer element electrically isolates the n-electrode from the p-electrode, in which the n-electrode and the p-electrode extend laterally over the at least one spacer element, wherein said first surface of said n-type epitaxial semiconductor layer is modified to enhance emission from said semiconductor device.