发明名称 |
FinFET and fabrication method thereof |
摘要 |
A method is provided for fabricating a FinFET. The method includes providing a semiconductor substrate; forming a hard mask layer on the semiconductor substrate, wherein a position of the hard mask layer may corresponds to a position of subsequently formed fin; forming a doping region in the semiconductor substrate by using the hard mask layer as a mask to perform an anti-punch-through ion implantation process; forming an anti-punch-through region by performing an annealing process onto the doping region, such that impurity ions in the doping region diffuse into the semiconductor substrate under the hard mask layer; and forming a trench by using the hard mask layer as a mask to etch the semiconductor substrate and the doping region, wherein the semiconductor substrates between the adjacent trenches constitutes a fin. |
申请公布号 |
US9634087(B1) |
申请公布日期 |
2017.04.25 |
申请号 |
US201615239186 |
申请日期 |
2016.08.17 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION;SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION |
发明人 |
Xie Xinyun |
分类号 |
H01L21/8238;H01L29/06;H01L21/225;H01L21/265;H01L29/66 |
主分类号 |
H01L21/8238 |
代理机构 |
Anova Law Group, PLLC |
代理人 |
Anova Law Group, PLLC |
主权项 |
1. A method for fabricating a fin field-effect transistor (FinFET), comprising:
providing a semiconductor substrate; forming a hard mask layer on the semiconductor substrate, wherein a position of the hard mask layer corresponds to a position of subsequently formed fin; forming a doping region in the semiconductor substrate by using the hard mask layer as a mask to perform an anti-punch-through ion implantation process; forming an anti-punch-through region by performing an annealing process onto the doping region, such that impurity ions in the doping region diffuse into the semiconductor substrate under the hard mask layer; and forming a trench by using the hard mask layer as a mask to etch the semiconductor substrate and the doping region, wherein the semiconductor substrates between the adjacent trenches constitutes a fin. |
地址 |
Shanghai CN |