| 发明名称 | Epitaxial wafer for light-emitting diodes | ||
| 摘要 | The present invention relates to an epitaxial wafer for a light-emitting diode wherein the peak emission wavelength is 655 nm or more, and it is possible to improve reliability. The epitaxial wafer for light-emitting diodes includes a GaAs substrate (1) and a pn-junction type light-emitting unit (2) provided on the GaAs substrate (1), wherein light-emitting unit (2) is formed as a multilayer structure in which a strained light-emitting layer and a barrier layer are alternately stacked, and the composition formula of the barrier layer is (AlXGa1-X)YIn1-YP (0.3≦X≦0.7, 0.51≦Y≦0.54). | ||
| 申请公布号 | US9627578(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201113807608 | 申请日期 | 2011.07.04 |
| 申请人 | SHOWA DENKO K.K. | 发明人 | Seo Noriyoshi;Matsumura Atsushi;Takeuchi Ryouichi |
| 分类号 | H01L29/06;H01L33/06;A01G7/04;H01L33/30;H01L33/12;H01L33/16 | 主分类号 | H01L29/06 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. An epitaxial wafer for a light-emitting diode, comprising a GaAs substrate, a pn junction-type light-emitting unit provided on the GaAs substrate, wherein the light-emitting unit is formed as a multilayer structure in which a strained light-emitting layer and a barrier layer are alternately stacked, and a composition formula of the barrier layer is (AlXGa1-X)YIn1-YP(0.3≦X≦0.7, 0.51≦Y≦0.54), a thickness of the barrier layer is within a range from 35 to 50 nm, and the light-emitting unit comprises 8 to 40 layers of strained light-emitting layers and is an undoped unit. | ||
| 地址 | Tokyo JP | ||