Semiconductor device and an integrated circuit comprising an ESD protection device, ESD protection devices and a method of manufacturing the semiconductor device

摘要

A semiconductor device is provided which comprises an ESD protection device. The structure of the semiconductor device comprises a p-doped isolated region in which a structure is manufactured which operates as a Silicon Controlled Rectifier which is coupled between an I/O pad and a reference voltage or ground voltage. The semiconductor device also comprises a pnp transistor which is coupled parallel to the Silicon Controlled Rectifier. The base of the transistor is coupled to the gate of the Silicon Controlled Rectifier. In an optional embodiment, the base and gate are also coupled to the I/O pad.

主权项

1. A first ESD protection circuit for protecting an integrated circuit against relatively high positive voltages received an I/O pad of the integrated circuit, the first ESD protection circuit comprising:
a first terminal configured to be coupled to the I/O pad of the integrated circuit; a second terminal configured to be coupled to a reference voltage or to a ground voltage; a first Silicon-controlled rectifier, the first Silicon-controlled rectifier coupled with an anode connected to the first terminal and connected with a cathode to the second terminal; a first pnp transistor, the first pnp transistor coupled with an emitter to the first terminal, coupled with a collector to the cathode, and connected with a base connected to a gate of the first Silicon-controlled rectifier.