发明名称 THICK FILM MAGNETIC SEMICONDUCTOR AND PREPARATION THEREOF
摘要 <p>PURPOSE:To obtain an element having thermistor characteristics and varistor characteristics by forming a thick film on an insulating substrate from a mixture of soft magnetic oxide and resistance paste. CONSTITUTION:For example, a thick film is formed on an insulating substrate 1 composed of alumina, zirconia or titania from a mixture of soft magnetic oxide and resistance paste. Subsequently, an electrode pattern 2 is formed to the upper layer of the thick film. In this case, the soft magnetic oxide is constituted of Mn-Cu-Zn type ferrite and the resistance paste is constituted of a ruthenium compound. By this constitution, the resistance of an element reacts with temp. or gas concn. in spite of one element and the element having both of thermistor characteristics and varistor characteristics can be obtained.</p>
申请公布号 JPH03210468(A) 申请公布日期 1991.09.13
申请号 JP19900004444 申请日期 1990.01.16
申请人 SEKI KYOSHIRO 发明人 SEKI KYOSHIRO;HIGAKI TETSUO;CHIBA SHIGEKI;SHIDA JUNICHI;MURAKAMI KOICHI
分类号 G01K7/16;G01N27/12;H01C7/00;H01C7/04 主分类号 G01K7/16
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