Temperature Compensation of Fabricated Semiconductors

摘要

Semiconductor devices and methods are described wherein temperature dependence of leakage current in at least one pathway of a device is compensated by a resistor in the device. Control of temperature dependent leakage current is particularly useful for silicon nitride devices and for circuits such as cascode circuits. A semiconductor leakage current that increases with temperature may be compensated by a fabricated resistor such as a boron doped polysilicon resistor that is electrically connected to compensate the leakage current in the pathway.

主权项

1. A fabricated semiconductor having temperature compensated leakage current in at least one pathway, comprising:
at least one semiconductor device in a pathway having a leakage current that increases with temperature; and a fabricated resistor electrically connected to the at least one semiconductor device, the fabricated resistor fabricated so as to have a temperature coefficient of resistance that causes a current flow in the fabricated resistor that is equal and opposite to that of the at least one semiconductor device to compensate the leakage current in the pathway.