LOW TEMPERATURE CONFORMAL DEPOSITION OF SILICON NITRIDE ON HIGH ASPECT RATIO STRUCTURES

摘要

Embodiments described herein generally relate to methods for forming a conformal silicon nitride layer at low temperatures. The conformal silicon nitride layer may be formed by pulsing a radio frequency (RF) power into a processing chamber while a gas mixture including trisilylamine is flowing into the processing chamber. Pulsed RF power increases the ratio of neutral to ionic species and activated species of trisilylamine have low sticking coefficients and greater surface migration. As a result, conformality of the deposited silicon nitride layer is improved.

主权项

1. A method for forming a silicon nitride layer, comprising:
flowing trisilylamine into a processing chamber; activating the trisilylamine by forming a plasma while the trisilylamine is flowing into the processing chamber, wherein the plasma is formed by pulsing radio frequency power; and forming the silicon nitride layer on a substrate disposed in the processing chamber.