发明名称 Monolithic film of integrated highly oriented halogenated graphene
摘要 Provided is an integrated layer (10 nm to 500 μm) of highly oriented halogenated graphene having a formula C6ZxOy, wherein Z is a halogen element selected from F, Cl, Br, I, or a combination thereof, x=0.01 to 6.0, y=0 to 5.0, and x+y≦6.0. The integrated layer has halogenated graphene crystals having an inter-planar spacing d002 of 0.35 nm to 1.2 nm (more typically 0.4-1.0 nm) as determined by X-ray diffraction. The integrated layer has multiple constituent graphene halide planes that are substantially parallel to one another along one direction having an average deviation angle of these graphene halide planes less than 10 degrees.
申请公布号 US2017081194(A1) 申请公布日期 2017.03.23
申请号 US201514756592 申请日期 2015.09.23
申请人 Zhamu Aruna;Jang Bor Z. 发明人 Zhamu Aruna;Jang Bor Z.
分类号 C01B31/04 主分类号 C01B31/04
代理机构 代理人
主权项 1. An integrated layer of oriented halogenated graphene, wherein said integrated layer has a thickness from 10 nm to 500 μm and a chemical formula of C6ZxOy, wherein Z is a halogen element selected from F, Cl, Br, I, or a combination thereof, x=0.01 to 6.0, y=0 to 5.0, and x+y≦6.0; and said integrated layer of halogenated graphene has an inter-planar spacing d002 of 0.35 nm to 1.2 nm as determined by X-ray diffraction.
地址 Springboro OH US