| 摘要 |
Since the gate electrode (1) and the capacitor electrode (2) are made into a double layer structure, the first layers (1a, 2a) in contact with the substrate (0) are made of ITO, and the second layers (1b, 2b) in contact with the gate insulating layer (3) are made of an metallic oxide layer, it becomes possible to form the gate electrode (1) and the capacitor electrode (2) having high optical transparency and high conductivity. Therefore, it becomes possible to improve the optical transparency of a thin film transistor and to improve the display performance of an image displaying apparatus for which the thin film transistor is used by using the above-described gate electrode (1) and the above-described capacitor electrode (2). |
