发明名称 |
DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A display apparatus includes a substrate having a plurality of pixel areas, and a pixel circuit including a storage capacitor and a plurality of thin film transistors (TFTs) which are disposed in each pixel area. At least one of the plurality of TFTs includes a semiconductor layer disposed on the substrate and including a first ion impurity, a source area and a drain area, which are spaced apart from each other, have a first depth from a surface of the semiconductor layer, and include a second ion impurity, a gate electrode disposed on the semiconductor layer between the source area and the drain area, and a bias wiring electrically connected to the semiconductor layer and disposed adjacent to at least one of the source area and the drain area. |
申请公布号 |
US2017077202(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201615142698 |
申请日期 |
2016.04.29 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Ha Sangkwon |
分类号 |
H01L27/32;H01L29/66;H01L29/786 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
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主权项 |
1. A display apparatus comprising:
a substrate having a plurality of pixel areas; and a pixel circuit comprising a storage capacitor and a plurality of thin film transistors (TFTs) which are disposed in each pixel area, wherein at least one of the plurality of TFTs comprises:
a semiconductor layer disposed on the substrate and comprising a first ion impurity;a source area and a drain area, which are spaced apart from each other, having a first depth from a surface of the semiconductor layer, and comprising a second ion impurity;a gate electrode disposed on the semiconductor layer between the source area and the drain area; anda bias wiring electrically connected to the semiconductor layer and disposed adjacent to at least one of the source area and the drain area. |
地址 |
Yongin-City KR |