SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A three-dimensional storage device and a manufacturing method therefor. An isolation structure (3) is embedded between a common source region (11) and a substrate (1) under the common source region (11), so that undesirable diffusion generated by impurities can be suppressed during injection of the common source region (11), and an operation failure caused by excessive diffusion of the impurities is avoided. Electrons flow from the common source region (11) to a bit line (13) when the three-dimensional storage device is in a programmed state and a read state; and holes are injected from the substrate (1) when the three-dimensional storage device is in an erasing state. Due to the presence of the isolation structure (3), required separation of the electrons and the holes in space is achieved on the three-dimensional storage device during programming/erasing, thereby improving the erasing and writing efficiency, and helping to improve the integration.