| 主权项 |
1. An electronic device including a semiconductor memory unit, wherein the semiconductor memory unit comprises:
a first circuit area including a plurality of first storage cells, each having a variable resistance element and being selected when a corresponding word line is activated, a first reference resistance element having a first resistance value, and a first read control unit suitable for reading data of a storage cell selected among the plurality of first storage cells based on a bias voltage; a second circuit area including a plurality of second storage cells, each having a variable resistance element and being selected when a corresponding word line is activated, a second reference resistance element having a second resistance value, and a second read control unit suitable for reading data of a storage cell selected among the plurality of second storage cells based on the bias voltage, and for being arranged spaced apart from the first circuit area; and a third circuit area arranged between the first circuit area and the second circuit area, wherein the third circuit area includes a word line driving unit suitable for driving a plurality of word lines, and a bias voltage generation unit suitable for generating the bias voltage based on currents flowing through the first reference resistance element and the second reference resistance element, wherein the first reference resistance element and the second reference resistance element are arranged adjacent to the third circuit area. |
