| 摘要 |
A control circuit (105) controls execution of first-stage processing for increasing a threshold voltage of both or one of a first storage element (102) and a second storage element (103) until the threshold voltage of the first storage element (102) and the second storage element (103) attains to a prescribed write verify level when a request for erase of twin cell data is received. The control circuit 105 controls execution of second-stage processing for lowering a threshold voltage of the first storage element (102) and the second storage element (103) until the threshold voltage of the first storage element (102) and the second storage element (103) attains to a prescribed erase verify level after the first-stage processing is performed. |
