| 摘要 |
PROBLEM TO BE SOLVED: To provide an art capable of inhibiting a carrier from concentrating at one place when a reverse recovery current flows through an electrode.SOLUTION: A semiconductor device 1 comprises: a cathode electrode 2; an n type semiconductor layer 11 arranged on a surface of the cathode electrode 2; a ptype anode layer 5 arranged on a surface layer part of the n type semiconductor layer 11; a p type carrier passage region 6 arranged on the surface layer part of the n type semiconductor layer 11 and adjacent to a circumference of the anode layer 5; an anode electrode 7 arranged on a surface of the anode layer and on a part of a surface of the carrier passage region 6; and a peripheral breakdown voltage structure 8 formed around the carrier passage region 6. The carrier passage region 6 is formed deeper than the anode layer 5 and has an impurity concentration at a contact face contacting the anode electrode 7, which gradually becomes a lower concentration along a plane direction from the anode layer 5 toward the peripheral breakdown voltage structure 8 side, and an impurity concentration at a part not contacting the anode electrode 7, which gradually becomes a higher concentration along a depth direction. |
