| 发明名称 | Semiconductor structure and method of manufacturing the same | ||
| 摘要 | A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate comprising a recess portion filled with a conductive material; a conductive trace overlying and contacting the conductive material; a conductive pillar disposed on the conductive trace and over the recess portion of the substrate; and a semiconductor chip disposed on the conductive pillar, wherein the conductive trace comprises a width WT and a thickness TT, the recess portion of the substrate comprises a width WR in the width direction of the conductive trace and a depth DR, and the ratio of WR to WT ranges from about 0.25 to about 1.8 and the ratio of DR to TT ranges from about 0.1 to about 3. | ||
| 申请公布号 | US9589924(B2) | 申请公布日期 | 2017.03.07 |
| 申请号 | US201414471412 | 申请日期 | 2014.08.28 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. | 发明人 | Wu Jiun Yi;Liang Yu-Min |
| 分类号 | H01L23/498;H01L23/00 | 主分类号 | H01L23/498 |
| 代理机构 | WPAT, P.C., Intellectual Property Attorneys | 代理人 | WPAT, P.C., Intellectual Property Attorneys ;King Anthony |
| 主权项 | 1. A semiconductor structure, comprising: a substrate comprising a recess portion filled with a conductive material; a conductive trace overlying and contacting the conductive material; a conductive pillar disposed on the conductive trace and over the recess portion of the substrate; and a semiconductor chip disposed on the conductive pillar, wherein the conductive trace comprises a width WT and a thickness TT, the recess portion of the substrate comprises a width WR in the width direction of the conductive trace and a depth DR, and the ratio of WR to WT ranges from about 0.25 to about 1.8 and the ratio of DR to TT ranges from about 0.1 to about 3. | ||
| 地址 | Hsinchu TW | ||