发明名称 |
Low temperature spacer for advanced semiconductor devices |
摘要 |
Embodiments of the present invention provide semiconductor structures and methods for making the same that include a boron nitride (BN) spacer on a gate stack, such as a gate stack of a planar FET or FinFET. The boron nitride spacer is fabricated using atomic layer deposition (ALD) and/or plasma enhanced atomic layer deposition (PEALD) techniques to produce a boron nitride spacer at relatively low temperatures that are conducive to devices made from materials such as silicon (Si), silicon germanium (SiGe), germanium (Ge), and/or III-V compounds. Furthermore, the boron nitride spacer may be fabricated to have various desirable properties, including a hexagonal textured structure. |
申请公布号 |
US9590054(B2) |
申请公布日期 |
2017.03.07 |
申请号 |
US201615001285 |
申请日期 |
2016.01.20 |
申请人 |
International Business Machines Corporation |
发明人 |
Chan Kevin K.;Grill Alfred;Neumayer Deborah A.;Park Dae-Gyu;Sosa Norma E.;Yang Min |
分类号 |
H01L21/8238;H01L29/40;H01L29/51;H01L29/66;H01L21/8234;H01L29/49;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
Sharkan Noah A. |
主权项 |
1. A semiconductor device comprising:
a semiconductor body; a gate stack disposed atop the semiconductor body; and a boron nitride spacer in direct contact with sidewalls of the gate stack and at least a portion of the semiconductor body, wherein the boron nitride spacer has a hexagonal textured structure, and the boron nitride spacer either includes an amorphous region which is less than or equal to 5 nm thick or includes no amorphous region. |
地址 |
Armonk NY US |