Method and Drive Circuit for Driving a Transistor

摘要

A transistor is driven by a drive circuit that includes a logic unit and drive signal generator. The drive signal generator outputs a temporally variable drive voltage for driving the transistor, based on setpoint state information. A short-circuit information signal contains information about a possible short circuit of a load connected in series with the transistor load path. In response to this signal, the drive signal generator switches on the transistor at a first point in time by setting the transistor drive voltage to a value or a value range above a switch-on threshold value of the transistor, but limits the drive voltage to a maximum first switch-on voltage limit value. The drive signal generator maintains the drive voltage at maximally the first switch-on voltage limit value or sets the drive voltage to a value or a value range greater than or equal to a second switch-on voltage limit value.

主权项

1. A method for driving a transistor comprising a drive terminal and a load path by a drive circuit comprising a logic unit and a drive signal generator, wherein the drive signal generator is designed to output a temporally variable drive voltage with which the transistor is driven, the method comprising:
receiving at the drive signal generator from the logic unit setpoint state information according to which the transistor is intended in principle to be switched on or to remain switched on, or according to which the transistor is intended in principle to be switched off or to remain switched off; feeding a first short-circuit information signal of a short-circuit monitoring unit to the drive signal generator, the first short-circuit signal containing information about the potential presence of a short circuit of an electrical load connected in series with the load path; switching on the transistor via the drive signal generator, responsive to the setpoint state information, at a first point in time by setting the drive voltage of the transistor to a value or a value range above a switch-on threshold value of the transistor, and limiting the drive voltage to a maximum first switch-on voltage limit value; and deciding, by the drive signal generator, depending on the first short-circuit information signal, whether the limiting of the drive voltage is maintained to maximally the first switch-on voltage limit value or whether the drive voltage is set to a value or a value range greater than or equal to a second switch-on voltage limit value which is greater than the first switch-on voltage limit value.