发明名称 |
SEMICONDUCTOR DEVICE INCLUDING DUAL SPACER AND UNIFORM EPITAXIAL BUFFER INTERFACE OF EMBEDDED SIGE SOURCE/DRAIN |
摘要 |
A semiconductor device includes at least one semiconductor fin on an upper surface of a semiconductor substrate. The semiconductor fin includes a channel region formed of a first semiconductor material interposed between opposing embedded source/drain regions formed of a second semiconductor material different from the first semiconductor material. At least one gate stack is formed on the upper surface of the semiconductor substrate and wraps around the channel region. The embedded source/drain regions have a symmetrical shape and a uniform embedded interface. |
申请公布号 |
US2017062614(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201514834481 |
申请日期 |
2015.08.25 |
申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Liu Zuoguang;Yamashita Tenko;Yeh Chun-Chen |
分类号 |
H01L29/78;H01L21/306;H01L29/417;H01L29/167;H01L21/02;H01L29/08;H01L29/66;H01L29/165 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |