发明名称 FLIP CHIP BACKSIDE MECHANICAL DIE GROUNDING TECHNIQUES
摘要 A semiconductor device includes an integrated circuit attached to a chip carrier in a flip chip configuration. A substrate extends to a back surface of the integrated circuit, and an interconnect region extends to a front surface of the integrated circuit. A substrate bond pad is disposed at the front surface, and is electrically coupled through the interconnect region to the semiconductor material. The chip carrier includes a substrate lead at a front surface of the chip carrier. The substrate lead is electrically coupled to the substrate bond pad. An electrically conductive compression sheet is disposed on the back surface of the integrated circuit, with lower compression tips making electrical contact with the semiconductor material in the substrate. The electrically conductive compression sheet is electrically coupled to the substrate lead of the chip carrier by a back surface shunt disposed outside of the integrated circuit.
申请公布号 US2017062377(A1) 申请公布日期 2017.03.02
申请号 US201615249424 申请日期 2016.08.28
申请人 Texas Instruments Incorporated 发明人 Salzman James Fred
分类号 H01L23/00;H01L21/56;H01L23/31;H01L21/48;H01L27/118;H01L23/498 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device, comprising: an integrated circuit, comprising: a substrate comprising a semiconductor material, the semiconductor material extending to a first surface of the integrated circuit;a plurality of n-channel metal oxide semiconductor (NMOS) transistors disposed in the substrate;a plurality of p-channel metal oxide semiconductor (PMOS) transistors disposed in the substrate;an interconnect region adjacent to the substrate, the interconnect region extending to a second surface of the integrated circuit, wherein the second surface of the integrated circuit is opposite from the first surface of the integrated circuit; anda substrate bond pad located at the second surface of the integrated circuit, the substrate bond pad being electrically coupled through the interconnect region to the semiconductor material; a chip carrier comprising a substrate lead at a first surface of the chip carrier, wherein the integrated circuit is attached to the chip carrier in a flip chip configuration wherein the second surface of the integrated circuit is facing the first surface of the chip carrier, and the substrate lead is electrically coupled to the substrate bond pad; an electrically conductive compression sheet disposed on the first surface of the integrated circuit, the electrically conductive compression sheet comprising first compression tips which make electrical contact to the semiconductor material at the first surface of the integrated circuit; and a back surface shunt which provides an electrical connection between the electrically conductive compression sheet and the substrate lead, outside of the integrated circuit.
地址 Dallas TX US