Method for producing semiconductor device and semiconductor device

摘要

A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate, and forming a first insulating film; a second step of forming a second insulating film, and forming a pillar-shaped semiconductor layer, a first dummy gate, and a first hard mask; a third step of forming a second hard mask on a side wall of the first hard mask, and etching a second polysilicon so as to be left on side walls of the first dummy gate and the pillar-shaped semiconductor layer to form a second dummy gate; and a fourth step of forming a fifth insulating film around the second dummy gate, etching the fifth insulating film so as to have a sidewall shape to form a sidewall formed of the fifth insulating film, and forming a first epitaxially grown layer on the fin-shaped semiconductor layer.

主权项

1. A method for producing a semiconductor device, the method comprising:
a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate, and forming a first insulating film around the fin-shaped semiconductor layer; a second step, after the first step, of forming a second insulating film around the fin-shaped semiconductor layer, depositing a first polysilicon on the second insulating film and planarizing the first polysilicon, forming a third insulating film on the first polysilicon, forming a second resist for forming a gate line and a pillar-shaped semiconductor layer, in a direction perpendicular to a direction the fin-shaped in which the semiconductor layer extends, etching the third insulating film, the first polysilicon, the second insulating film, and the fin-shaped semiconductor layer to form a pillar-shaped semiconductor layer, a first dummy gate formed of the first polysilicon, and a first hard mask formed of the third insulating film; a third step, after the second step, of forming a fourth insulating film around the pillar-shaped semiconductor layer and the first dummy gate, depositing a second polysilicon around the fourth insulating film and planarizing the second polysilicon, performing etch back to expose the first hard mask, depositing a sixth insulating film, etching the sixth insulating film to form a second hard mask on a side wall of the first hard mask, and etching the second polysilicon so as to be left on side walls of the first dummy gate and the pillar-shaped semiconductor layer to form a second dummy gate; and a fourth step of forming a fifth insulating film around the second dummy gate, etching the fifth insulating film so as to have a sidewall shape to form a sidewall formed of the fifth insulating film, and forming a first epitaxially grown layer on the fin-shaped semiconductor layer.