Devices with embedded non-volatile memory and metal gates and methods for fabricating the same

摘要

Devices and methods for fabricating devices with floating gates and replacement metal gates are provided. In an embodiment, a method for fabricating a device includes providing a semiconductor substrate. The method forms a floating gate and a sacrificial gate over the semiconductor substrate. Further, the method replaces the sacrificial gate with a metal gate. After replacing the sacrificial gate with the metal gate, the method forms a control gate over the floating gate.

主权项

1. A method for fabricating a device, the method comprising:
providing a semiconductor substrate; forming a floating gate with a first width and a sacrificial gate over the semiconductor substrate; replacing the sacrificial gate with a metal gate; and after replacing the sacrificial gate with the metal gate, forming a control gate with a second width greater than the first width over the floating gate.