发明名称 Memory device and method for fabricating the same
摘要 A memory device comprises a first conductive stripe, a first memory layer, a first conductive pillar, a first dielectric layer and a first conductive plug. The first conductive strip extends along a first direction. The first memory layer extends along a second direction adjacent to and overlapping with the first conductive stripe to define a first memory area thereon. The first conductive pillar extends along the second direction and overlapping with the first memory area. The first dielectric layer extends along the second direction adjacent to the first conductive stripe, the first memory layer and the first conductive pillar. The first conductive plus extends along the second direction and at least overlaps with a portion of the first conductive stripe, wherein the first conductive plus is electrically insulated from the first conductive stripe, the first memory layer and the first conductive pillar by the first dielectric layer.
申请公布号 US9583350(B2) 申请公布日期 2017.02.28
申请号 US201514589006 申请日期 2015.01.05
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 Lai Sheng-Chih;Chen Wei-Chen
分类号 H01L29/76;H01L21/28;H01L27/115 主分类号 H01L29/76
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A memory device, comprising: a first conductive stripe, extending along a first direction; a first memory layer, extending along a second direction to overlap with the first conductive stripe, so as to define a first memory area at a position where the first memory layer overlaps with first the conductive stripe; a first conductive pillar, extending adjacent to the first memory layer along the second direction, directly in contact with the first memory layer and overlapping with the first memory area; a first dielectric layer, extending along the second direction and directly in contact with the first conductive stripe, the first memory layer and the first conductive pillar; and a first conductive plug extending along the second direction and at least overlapping with a portion of the first conductive stripe, wherein the first conductive plug is surrounded by the first dielectric layer and electrically insulated from the first conductive stripe, the first memory layer and the first conductive pillar by the first dielectric layer.
地址 Hsinchu TW