Photoresist and method

摘要

A photoresist with a group which will decompose bonded to a high etching resistance moiety is provided. Alternatively, the group which will decompose can additionally be attached to a re-attachment group that will re-attach to the polymer after the group which will decompose has cleaved from the polymer. The photoresist may also comprise a non-leaving monomer with a cross-linking site and a cross-linking agent.

主权项

1. A photoresist comprising:
a polymer having a hydrocarbon backbone, a high etch resistance structure attached to the hydrocarbon backbone with a single chain of carbon-carbon bonds between a carbon atom within the hydrocarbon backbone and a cyclic portion of the high etch resistance structure, and a group which will decompose bonded to the high etch resistance structure, wherein the high etch resistance structure has one of the following structures:  wherein R1 is a methyl group, and ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, and isopentyl group, and R3 is a C1 to C3 alkylene chain, and wherein R2 has one of the following structures:  wherein R4 and R5 are a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, an isopropylene group, or an isobutylene group and wherein R6 is the group which will decompose.