SEQUENTIAL CIRCUIT AND SEMICONDUCTOR DEVICE

摘要

The following semiconductor device provides high reliability and a narrower frame width. The semiconductor device includes a driver circuit and a pixel portion. The driver circuit has a first transistor including a first gate and a second gate electrically connected to each other with a semiconductor film sandwiched therebetween, and a second transistor electrically connected to the first transistor. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor. The liquid crystal element includes a first transparent conductive film electrically connected to the third transistor, a second conductive film, and a liquid crystal layer. The capacitor includes the first conductive film, a third transparent conductive film, and a nitride insulating film. The nitride insulating film is positioned between the first transparent conductive film and the third transparent conductive film, and positioned between the semiconductor film and the second gate of the first transistor.

主权项

1. A semiconductor device comprising:
a driver circuit comprising:
a first transistor comprising:
a first gate electrode;a semiconductor film over the first gate electrode;an insulating film over the semiconductor film;a nitride insulating film over the insulating film; anda second gate electrode over the nitride insulating film; anda second transistor; a pixel portion comprising:
a capacitor comprising:
a first transparent conductive film;the nitride insulating film over and in contact with the first transparent conductive film; anda second transparent conductive film over the nitride insulating film,a third transistor; anda liquid crystal element comprising:
the first transparent conductive film electrically connected to the third transistor;a liquid crystal layer over the first transparent conductive film; anda first conductive film over the liquid crystal layer, wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to one of a source electrode and a drain electrode of the first transistor.