| 发明名称 | FinFET LDMOS device and manufacturing methods | ||
| 摘要 | An LDMOS (Laterally-Diffused Metal Oxide Semiconductor) device has a substrate, which includes a first doped region, a second doped region, and a shallow trench isolation (STI) region disposed in the second doped region. The first doped region and the second doped region are adjacent and have different conductivity types. The device also has a gate structure disposed on the substrate; the gate structure substantially does not overlap the second doped region. | ||
| 申请公布号 | US9570606(B2) | 申请公布日期 | 2017.02.14 |
| 申请号 | US201514839917 | 申请日期 | 2015.08.28 |
| 申请人 | Semiconductor Manufacturing International (Shanghai) Corporation | 发明人 | Li Yong |
| 分类号 | H01L29/78;H01L29/66;H01L29/06;H01L29/165 | 主分类号 | H01L29/78 |
| 代理机构 | Kilpatrick Townsend & Stockton LLP | 代理人 | Kilpatrick Townsend & Stockton LLP |
| 主权项 | 1. An LDMOS (Laterally-Diffused Metal Oxide Semiconductor) device, comprising: a substrate, said substrate having: a first doped region;a second doped region; anda shallow trench isolation (STI) region disposed in the second doped region;wherein the first doped region and the second doped region are adjacent and have different conductivity types; a first fin structure comprising a portion of the first doped region and a first portion of the second doped region; a second fin structure comprising a second portion of the second doped region; and a gate structure on the first fin structure, wherein the gate structure substantially does not overlap with the first portion of the second doped region of the first fin structure. | ||
| 地址 | Shanghai CN | ||