TUNABLE BARRIER TRANSISTORS FOR HIGH POWER ELECTRONICS

摘要

Various aspects of tunable barrier transistors that can be used in high power electronics are provided. In one example, among others, a tunable barrier transistor includes an inorganic semiconducting layer; a source electrode including a nano-carbon film disposed on the inorganic semiconducting layer; a gate dielectric layer disposed on the nano-carbon film; and a gate electrode disposed on the gate dielectric layer over at least a portion of the nano-carbon film. The nano-carbon film can form a source-channel interface with the inorganic semiconducting layer. A gate field produced by the gate electrode can modulate a barrier height at the source-channel interface. The gate field may also modulate a barrier width at the source-channel interface.

主权项

1. A tunable barrier transistor, comprising:
an inorganic semiconducting layer; a source electrode comprising a nano-carbon film disposed on a portion of a first side of the inorganic semiconducting layer, the nano-carbon film forming a source-channel interface with the inorganic semiconducting layer; a gate dielectric layer disposed on the nano-carbon film of the source electrode; and a gate electrode disposed on the gate dielectric layer over at least a portion of the nano-carbon film of the source electrode that is disposed on the portion of the first side of the inorganic semiconducting layer, where a gate field produced by the gate electrode modulates a barrier height at the source-channel interface.