| 发明名称 |
SPLIT GATE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
The present disclosure relates to a split gate memory device. In some embodiments, the split gate memory device includes a memory gate arranged over a substrate, and a select gate arranged over the substrate. An inter-gate dielectric layer is arranged between sidewalls of the memory gate and the select gate that face one another. The inter-gate dielectric layer extends under the memory gate. A first dielectric is disposed above the inter-gate dielectric layer and is arranged between the sidewalls of the memory gate and the select gate. |
| 申请公布号 |
US2017040429(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615332115 |
申请日期 |
2016.10.24 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Wu Chang-Ming;Wu Wei Cheng;Liu Shih-Chang;Chuang Harry-Hak-Lay;Tsai Chia-Shiung |
| 分类号 |
H01L29/423;H01L29/66;H01L21/28;H01L29/792;H01L29/51;H01L27/115 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A split gate memory device, comprising:
a memory gate arranged over a substrate; a select gate arranged over the substrate; an inter-gate dielectric layer arranged between sidewalls of the memory gate and the select gate that face one another, the inter-gate dielectric layer extending under the memory gate; and a first dielectric disposed above the inter-gate dielectric layer and arranged between the sidewalls of the memory gate and the select gate. |
| 地址 |
Hsin-Chu TW |
