发明名称 |
Crosstalk polarity reversal and cancellation through substrate material |
摘要 |
Transmission lines with a first dielectric material separating signal traces and a second dielectric material separating the signal traces from a ground plane. In embodiments, mutual capacitance is tuned relative to self-capacitance to reverse polarity of far end crosstalk between a victim and aggressor channel relative to that induced by other interconnect portions along the length of the channels, such as inductively coupled portions. In embodiments, a transmission line for a single-ended channel includes a material of a higher dielectric constant within the same routing plane as a microstrip or stripline conductor, and a material of a lower dielectric constant between the conductor and the ground plane(s). In embodiments, a transmission line for a differential pair includes a material of a lower dielectric constant within the same routing plane as a microstrip or stripline conductors, and a material of a higher dielectric constant between the conductors and the ground plane(s). |
申请公布号 |
US9564407(B2) |
申请公布日期 |
2017.02.07 |
申请号 |
US201615187737 |
申请日期 |
2016.06.20 |
申请人 |
Intel Corporation |
发明人 |
Zhang Zhichao;Memioglu Tolga;Wu Tao;Aygun Kemal |
分类号 |
H01L23/48;H05K1/11;H01L23/52;H01L23/66;H01L23/00;H01L23/498;H01L25/065;H01L23/50;H01L25/18;H01P3/08;H05K1/02 |
主分类号 |
H01L23/48 |
代理机构 |
Blakely, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakely, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. A system comprising:
a first integrated circuit (IC) chip having a first and second input/output (I/O) channels; a substrate affixed to the IC chip through first interconnect bumps, the substrate including transmission line circuitry further comprising:
a first conductive trace defining a routing path for the first I/O channel on a first metallization level disposed over a package substrate;a second conductive trace defining a routing path for the second I/O channel on the first metallization level;a first dielectric material disposed between the first and second conductive traces;a ground plane on a second metallization level disposed over the substrate and above or below the first metallization level; anda second dielectric material disposed between the ground plane and the first and second conductive traces, wherein the second dielectric material has a different dielectric constant than that of the first dielectric material; and second bumps coupling the first and second I/O channels to a second IC chip. |
地址 |
Santa Clara CA US |