METHOD AND APPARATUS FOR CONTROLLED DOPANT INCORPORATION AND ACTIVATION IN A CHEMICAL VAPOR DEPOSITION SYSTEM

摘要

Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (UV) light source, which is controlled to produce a raster of a UV light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. In various embodiments, the tunable UV light source is configured external to a Metal Organic Chemical Vapor Deposition (MOCVD) chamber and controlled such that the UV light beam is directed though a window defined in a wall of the MOCVD chamber.

主权项

1. A chemical vapor deposition system comprising:
a chemical vapor deposition reactor including:
a chamber;a rotatable wafer carrier adapted to receive at least one wafer and rotate at a predetermined rotation speed during epitaxial growth;at least one wafer mounted to the rotatable wafer carrier within the chamber;a viewport defined in a wall of the chamber; anda gas injection system configured to deliver a gas mixture towards the at least one wafer; a UV light source configured to generate a UV light beam, the UV light source operably coupled to the viewport; a rastering subsystem in communication with the UV light source and adapted to control the UV light beam through the viewport towards the at least one wafer to produce a raster pattern on a semiconductor layer formed on the at least one wafer mounted within chamber such that, during epitaxial growth, in response to the predetermined rotation speed the UV light beam is configured to be incident upon a plurality of regions of the semiconductor layer such that point defects in such regions are dissociated.