GaN-BASED SCHOTTKY DIODE RECTIFIER

摘要

The present disclosure involves a GaN-based Schottky diode rectifier and a method of manufacturing the same. The GaN-based Schottky diode rectifier includes: a substrate, on which a GaN intrinsic layer and a barrier layer are grown in turn; a p-type two-dimension electron gas depletion layer located on an upper surface of the barrier layer; a cathode electrode located at a position on the upper surface of the barrier layer where is different from the position where the p-type two-dimension electron gas depletion layer is formed; and an anode electrode including a first part and a second part electrically connected to each other.

主权项

1. A GaN-based Schottky diode rectifier, comprising:
a substrate, on which a GaN intrinsic layer and a barrier layer are grown in turn; a p-type two-dimension electron gas depletion layer located on an upper surface of the barrier layer to cover a part or whole of the upper surface of the barrier layer, or partially or fully formed in the upper surface of the barrier layer; a cathode electrode located at a position on the upper surface of the barrier layer which is different from the position where the p-type two-dimension electron gas depletion layer is located; and an anode electrode including a first part and a second part that are electrically connected to each other, wherein the first part of the anode electrode is located on an upper surface of the p-type two-dimension electron gas depletion layer and the second part of the anode electrode is in contact with a part of the upper surface of the barrier layer that is not covered by the p-type two-dimension electron gas depletion layer, and the second part and the cathode electrode are located at either side of the p-type two-dimension electron gas depletion layer.