| 摘要 |
This sensor, comprises: a first surface acoustic wave device, comprising a first piezoelectric substrate, formed from a (YXw lt )/ Õ / ¸ / È cut of a Langasite crystal, where Õ is equal to 0 ± 5° , ¸ is equal to 55 ± 20° and È is equal to 32.5 ± 7.5° and a first resonator having a first transducer laying on a first propagation surface and having two sets of interdigitated first electrodes formed from an electrically conductive material having a high melting temperature; and a second surface acoustic wave device, comprising a second piezoelectric substrate, formed from a (YXw lt )/ Õ / ¸ / È cut of a Langasite crystal, where Õ is equal to 0 ± 5° , ¸ is equal to 5 ± 20° and È is equal to 0 ± 7.5°, and a second resonator having a second transducer laying on a second propagation surface and having two sets of interdigitated second electrodes formed from an electrically conductive material having a high melting temperature; said first and second surface acoustic wave devices being independent one from the other in terms of surface acoustic wave propagation. |
