发明名称 Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
摘要 A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A conductive layer can be formed over the encapsulant and the semiconductor die. A transmissive layer can be formed over the semiconductor die. An interconnect structure can be formed through the encapsulant and electrically connected to the conductive layer, whereby the interconnect structure is formed off to only one side of the semiconductor die.
申请公布号 US9553162(B2) 申请公布日期 2017.01.24
申请号 US201313853969 申请日期 2013.03.29
申请人 STATS ChipPAC Pte. Ltd. 发明人 Strothmann Thomas J.;Anderson Steve;Han Byung Joon;Shim Il Kwon;Kuan Heap Hoe
分类号 H01L29/66;H01L21/56;H01L23/00;H01L27/146;H01L23/31 主分类号 H01L29/66
代理机构 Patent Law Group: Atkins and Associates, P.C. 代理人 Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C.
主权项 1. A method of making a semiconductor device, comprising: providing a first semiconductor die; depositing a first encapsulant over and completely surrounding the first semiconductor die; forming a first transmissive layer over an active surface of the first semiconductor die including an opening formed through the first transmissive layer; disposing a second semiconductor die in the opening of the first transmissive layer with the second semiconductor die coupled to the first semiconductor die by direct chip to chip assembly; and depositing a second encapsulant between the first semiconductor die and second semiconductor die and between the second semiconductor die and transmissive layer, wherein a top surface of the second encapsulant is coplanar with a top surface of the first transmissive layer.
地址 Singapore SG