| 发明名称 | Memory element, memory apparatus | ||
| 摘要 | A memory element includes a memory layer having magnetization perpendicular to a film face of the memory layer in which a direction of the magnetization configured to be changed. The memory element includes a magnetization-fixed layer having a magnetization perpendicular to the film face. The memory element includes an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. The memory layer includes a multilayer structure in which a non-magnetic material and an oxide are laminated. The direction of the magnetization of the memory layer is configured to be changed by applying a current in a lamination direction of the layered structure to record information in the memory layer. | ||
| 申请公布号 | US9553255(B2) | 申请公布日期 | 2017.01.24 |
| 申请号 | US201214358645 | 申请日期 | 2012.10.31 |
| 申请人 | SONY CORPORATION | 发明人 | Uchida Hiroyuki;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Higo Yutaka;Asayama Tetsuya;Yamane Kazutaka |
| 分类号 | H01L43/02;H01L27/22;H01L27/24;H01L43/08;H01L43/10;G11B5/39;G01R33/09;G11C11/16 | 主分类号 | H01L43/02 |
| 代理机构 | Dentons US LLP | 代理人 | Dentons US LLP |
| 主权项 | 1. A memory element, comprising: (a) a memory layer having magnetization perpendicular to a film face of the memory layer and parallel to a thickness direction of the memory element in which a direction of the magnetization is changeable, the memory layer comprising two ferromagnetic material layers between which is a multilayer structure in which a non-magnetic layer and a non-magnetic oxide layer are in direct contact with each other, the direction of the magnetization of the memory layer being changeable by applying a current in the thickness direction of the memory element to record information in the memory layer, the two ferromagnetic material layers comprising a same ferromagnetic material and having the same direction of magnetization, (b) a magnetization-fixed layer having a fixed magnetization perpendicular to the film face and parallel to the thickness direction of the memory element, and (c) an intermediate layer comprising a non-magnetic material between the memory layer and the magnetization-fixed layer, wherein, the non-magnetic layer is in direct contact with one of the ferromagnetic layers and the non-magnetic oxide layer is in direct contact with the other of the ferromagnetic layers, andthe non-magnetic layer is a metallic material layer and not an oxide layer. | ||
| 地址 | Tokyo JP | ||