| 发明名称 |
TRANSITION METAL DICHALCOGENIDE SEMICONDUCTOR ASSEMBLIES |
| 摘要 |
Embodiments of semiconductor assemblies, and related integrated circuit devices and techniques, are disclosed herein. In some embodiments, a semiconductor assembly may include a flexible substrate, a first barrier formed of a first transition metal dichalcogenide (TMD) material, a transistor channel formed of a second TMD material, and a second barrier formed of a third TMD material. The first barrier may be disposed between the transistor channel and the flexible substrate, the transistor channel may be disposed between the second barrier and the first barrier, and a bandgap of the transistor channel may be less than a bandgap of the first barrier and less than a bandgap of the second barrier. Other embodiments may be disclosed and/or claimed. |
| 申请公布号 |
US2017012117(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201415120496 |
申请日期 |
2014.03.21 |
| 申请人 |
INTEL CORPORATION |
发明人 |
RADOSAVLJEVIC Marko;DOYLE Brian S.;PILLARISETTY Ravi;MUKHERJEE Niloy;DASGUPTA Sansaptak;THEN Han Wui;CHAU Robert S. |
| 分类号 |
H01L29/778;H01L21/8256;H01L29/66;H01L27/12;H01L29/24;H01L21/02 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor assembly, comprising:
a flexible substrate; a first barrier formed of a first transition metal dichalcogenide (TMD) material; a transistor channel formed of a second TMD material; and a second barrier formed of a third TMD material; wherein the first barrier is disposed between the transistor channel and the flexible substrate, the transistor channel is disposed between the second barrier and the first barrier, and a bandgap of the transistor channel is less than a bandgap of the first barrier and less than a bandgap of the second barrier. |
| 地址 |
Santa Clara CA US |
