Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

摘要

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

主权项

1. A method comprising:
forming an indium tin oxide (ITO) layer on a substrate; depositing a hole transport layer (HTL) on the ITO layer, wherein the HTL comprises an amorphous, p-type NiO; annealing the HTL; forming an active layer on the annealed HTL, wherein the active layer comprises a donor region and an acceptor region; and forming a contact on the active layer, wherein: the contact comprises a cathode, and the depositing is performed by spin-coating a diluted nickel ink on the ITO layer.