Heavily doped semiconductor nanoparticles

摘要

Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.

主权项

1. A nanoparticle comprising
a semiconductor material, the semiconductor material being doped with at least two atoms of a dopant material, wherein
the at least two atoms of the dopant material are heterovalent to atoms of the semiconductor material, said at least two atoms of the dopant material being dispersed within the semiconductor material, andthe nanoparticle is free of dopant islands within the nanoparticle and free of dopant islands on the surface of the nanoparticle.