Low-K spacer for RMG finFET formation

摘要

A method for semiconductor fabrication includes providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels. Dummy spacers are formed along a periphery of the mask layers. A dummy gate structure is formed between the dummy spacers. The dummy spacers are removed to provide a recess. Low-k spacers are formed in the recess.

主权项

1. A method for semiconductor fabrication, comprising:
providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels, the mask layers extending over an upper surface of the one or more mandrels; forming dummy spacers along a periphery of the mask layers, the dummy spacers including a portion that is present on said upper surface of the mandrel; forming a dummy gate structure on said upper surface of the mandrel between the dummy spacers; removing the dummy spacers to provide a recess; forming low-k spacers in the recess; removing the mask layers after forming the low-k spacers; and forming source and drain regions after removing the mask layers.