Semiconductor device with control structure including buried portions and method of manufacturing

摘要

A semiconductor device includes transistor cells with source zones of a first conductivity type and body zones of a second conductivity type. The source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body. Control structures include first portions extending into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions in a distance to the first surface between the first portions, and third portions in a distance to the first surface and connecting the first and the second portions, wherein constricted sections of the semiconductor mesa are formed between neighboring third portions.

主权项

1. A semiconductor device, comprising:
transistor cells including source zones of a first conductivity type and body zones of a second conductivity type, wherein the source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body; and control structures that comprise first portions extending from a first surface into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions at a distance to the first surface between the first portions and separated, from the first surface and from the first portions, by portions of the semiconductor mesa, and third portions at a distance to the first surface, connecting the first and the second portions, and separated from the first surface by portions of the semiconductor mesa, wherein constricted sections of the semiconductor mesa separate third portions neighboring each other along a horizontal longitudinal extension of the semiconductor mesa.