METHOD FOR MANUFACTURING INSULATED GATE SEMICONDUCTOR DEVICE

摘要

A manufacturing method of the insulated gate type semiconductor device is provided to improve the machining accuracy of the first and the second aperture without lowering the productivity. The first insulating layer with a thickness capable of obstructing the introduction of impurity is formed at one main surface of a semiconductor substrate(2). The first insulating layer having opening is formed on one main surface of the semiconductor substrate by wet-etching the first insulating layer selectively. The second insulating layer with a thickness capable of introducing the impurity is formed in the opening of the first insulating layer. A gate electrode constituent film consisting of the material which comprises the gate electrode(4) while obstructing the introduction of impurity is formed on one main surface of the second insulating layer and the first insulating layer.