| 摘要 |
[Object] To provide a deposition method and a deposition apparatus, which are capable of cleaning a surface of a silicon substrate and causing a single crystal film having excellent crystallinity to grow on the surface. [Solving Means] A deposition method according to an embodiment of the present invention includes a process of etching a natural oxide film formed on a surface of a silicon substrate. The surface of the silicon substrate is cleaned. A film is caused to grow on the cleaned surface of the silicon substrate, the film including at least one of silicon and germanium. |
