| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer which prevents the occurrence of "cracks" when a semiconductor device is diced and achieves manufacturing of a high quality semiconductor device.SOLUTION: A semiconductor wafer comprises: a belt-like first modified layer 131 having a fractured crystal structure, which is formed on a left side of a traveling direction of a dicing blade 300 along the traveling direction of the dicing blade 300; and a belt-like second modified layer 132 having a fractured crystal structure, which is formed on a right side of the traveling direction of the dicing blade 300 along the traveling direction of the dicing blade 300. Assuming that a surface of the semiconductor wafer on which an element formation region exists is a first principal surface and a surface opposite to the first principal surface is a second principal surface, the first modified layer 131 and the second modified layer 132 are formed in such a manner that respective end edges 131a, 132a of the first modified layer 131 and the second modified layer 131, which are located on the second principal surface side, are exposed on the second principal surface of the semiconductor wafer. |
