发明名称 W-NI SPUTTER TARGET
摘要 A sputtering target contains 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% intermetallic phases. A process for producing a W—Ni sputtering target and a process of using the sputtering target are also provided.
申请公布号 EP3084517(A1) 申请公布日期 2016.10.26
申请号 EP20140838908 申请日期 2014.12.17
申请人 PLANSEE SE 发明人 LINKE, CHRISTIAN;SCHERER, THOMAS
分类号 G02F1/15;B22F3/10;C23C14/34 主分类号 G02F1/15
代理机构 代理人
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