发明名称 |
W-NI SPUTTER TARGET |
摘要 |
A sputtering target contains 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% intermetallic phases. A process for producing a W—Ni sputtering target and a process of using the sputtering target are also provided. |
申请公布号 |
EP3084517(A1) |
申请公布日期 |
2016.10.26 |
申请号 |
EP20140838908 |
申请日期 |
2014.12.17 |
申请人 |
PLANSEE SE |
发明人 |
LINKE, CHRISTIAN;SCHERER, THOMAS |
分类号 |
G02F1/15;B22F3/10;C23C14/34 |
主分类号 |
G02F1/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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