发明名称 Semiconductor device and temperature data generation method
摘要 Improvement in the accuracy of a temperature sensor is aimed at, suppressing the number of the test temperature in a test process. The semiconductor device comprises a coefficient calculation unit which calculates up to the N-th order coefficient (N is an integer equal to or greater than one) of a correction function as an N-th order approximation of a characteristic function indicating correspondence relation of temperature data measured by a temperature sensor unit and temperature, based on N+1 pieces of the temperature data including a theoretical value at a predetermined temperature in the characteristic function and N measured values of the temperature data measured by the temperature sensor unit at N points of temperature; and a correction operation unit which generates data including information on temperature, by performing calculation using the correction function to which the coefficients calculated are applied, based on temperature data measured by the temperature sensor unit.
申请公布号 EP2511682(B1) 申请公布日期 2016.10.19
申请号 EP20120160958 申请日期 2012.03.23
申请人 RENESAS ELECTRONICS CORPORATION 发明人 ARISAKA, NAOYA;ITO, TAKAYASU;HORIGUCHI, MASASHI
分类号 G01K7/01;G01K15/00;G05F3/30 主分类号 G01K7/01
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