アニールによるＩＩ−ＶＩ族の半導体材料中の沈殿物を除去するための方法

摘要

Removing precipitates from a solid II-VI semiconductor material comprises heating the material to a temperature T between the II-VI/VI eutectic temperature and the maximum congruent sublimation temperature of the material, keeping the material at temperature T until the precipitates have been eliminated and cooling the material to room temperature at a rate corresponding to the material's congruent sublimation line. All steps are performed under an inert gas stream.