发明名称 半導体装置及びその製造方法
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of joining projecting terminals together at a low temperature and with a low load, and to provide a method for manufacturing the same.SOLUTION: A method for manufacturing a semiconductor device comprises: arranging a first substrate having first projecting electrodes in which at least a peripheral part of a top face of each projecting electrode is formed by a metal film composed of microcrystal or amorphous and a second substrate having second projecting electrodes so as to face the first projecting electrodes and the second projecting electrodes; performing a heat treatment while applying pressure between the first substrate and the second substrate to bring the first projecting electrodes into tight contact with the second projecting electrodes; and recrystallizing the metal film to join the first projecting electrodes and the second projecting electrodes by means of recrystallized metal film.
申请公布号 JP6003564(B2) 申请公布日期 2016.10.05
申请号 JP20120252981 申请日期 2012.11.19
申请人 富士通株式会社 发明人 酒井 泰治;今泉 延弘
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
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