SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND RECORDING MEDIUM

摘要

The present invention provides a substrate processing apparatus and a substrate processing method capable of reducing an atmosphere adjustment time. According to the present invention, an energy beam irradiating unit (U4) comprises: an irradiation unit (54) to irradiate a wafer (W) with energy beams; a return unit (56) to return the wafer (W); a gas supply unit (70) to supply processing gas for processing the wafer (W) from an upper outlet (71); and a gas discharge unit (80) to discharge the processing gas from a discharge hole (81); and a control unit (100). The control unit (100): makes the return unit (56) return the wafer (W) to a first position to block a flowing path of the processing gas from the upper outlet (71) to the discharge hole (81); makes the gas supply unit (70) supply the processing gas from the upper discharge hole (71) when the wafer (W) is placed in the first position; and makes the irradiation unit (54) irradiate the surface of the wafer (W) with energy beams in a state that the processing gas supplied by the gas supply unit (70) is adsorbed on the surface of the wafer (W).