An insulating layer is conformally deposited on a plurality of mesa structures in a trench on a substrate. The insulating layer fills a space outside the mesa structures. A nucleation layer is deposited on the mesa structures. A III-V material layer is deposited on the nucleation layer. The III-V material layer is laterally grown over the insulating layer.
申请公布号
EP3050077(A1)
申请公布日期
2016.08.03
申请号
EP20130894184
申请日期
2013.09.27
申请人
INTEL CORPORATION
发明人
DASGUPTA, SANSAPTAK;THEN, HAN WUI;SUNG, SEUNG HOON;GARDNER, SANAZ K.;RADOSAVLJEVIC, MARKO;CHU-KUNG, BENJAMIN;CHAU, ROBERT S.