发明名称 MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
摘要 A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.
申请公布号 US2016167954(A1) 申请公布日期 2016.06.16
申请号 US201615050388 申请日期 2016.02.22
申请人 Versana Micro Inc 发明人 GOGOI BISHNU PRASANNA
分类号 B81B7/02 主分类号 B81B7/02
代理机构 代理人
主权项 1. A monolithically integrated multi-sensor (MIMs) comprising: A first integrated circuit comprising: a first sensor configured to measure a first parameter;a second sensor configured to measure a second parameter;a third sensor configured to measure a third parameter;a fourth sensor configured to measure a fourth parameter;a fifth sensor configured to measure a fifth parameter; anda sixth sensor configured to measure a sixth parameter wherein the first, second, and third parameters are different and wherein at least one of the first, second, third, fourth, fifth, or sixth sensors is a MEMs sensor.
地址 Scottsdale AZ US