| 摘要 |
<p>A method for preparing a photomask is provided to omit the additional stripping process for removing a resist layer pattern, thereby reducing the time for manufacturing a photomask. A method for preparing a photomask comprises the steps of forming a light screening layer on a mask substrate; surface treating the light screening layer to relieve the adhesive strength of the light screening layer and a photoresist layer pattern to be formed later; forming a photoresist layer pattern on the light screening layer; and wet etching the light screening layer exposed by the photoresist layer pattern to form a light screening layer and removing the photoresist layer pattern by the etchant used for wet etching.</p> |
