发明名称 |
DICING A WAFER OF LIGHT EMITTING DEVICES |
摘要 |
Some embodiments include a III-nitride light emitting device with a light emitting layer disposed between an n-type region and a p-type region. A glass layer is connected to the III-nitride light emitting device. A wavelength converting layer is disposed between the III-nitride light emitting device and the glass layer. The glass layer is narrower than the III-nitride light emitting device. |
申请公布号 |
US2016163934(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201414905865 |
申请日期 |
2014.07.07 |
申请人 |
KONINKLIJKE PHILIPS N.V. |
发明人 |
Peddada Satyanarayana Rao;Wei Frank L. |
分类号 |
H01L33/52;H01L33/56;H01L33/32;H01L33/50 |
主分类号 |
H01L33/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Eindhoven NL |